| abstract |
PROBLEM TO BE SOLVED: To provide a semiconductor thin film manufacturing apparatus capable of forming a SiN thin film simultaneously realizing low temperature, low hydrogen and appropriate stress control. An RF frequency electromagnetic wave is incident on a chamber 11 and a wafer 17 on which a SiN thin film is deposited is placed on a support base 26. The temperature of the wafer 17 on the support base 26 is set to a heater 27, a coolant passage. In the structure adjusted with the refrigerant flowing through 28, Control unit 31 so that the RF power of the RF frequency with respect to the total flow rate of the source gas composed of N 2 gas and SiH 4 gas is 7 W / sccm or less, and the temperature of wafer 17 is 50 ° C. to 300 ° C. The flow rate regulators 18 and 19, the heater 27, and the amount of the refrigerant were controlled. [Selection] Figure 1 |