http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005222799-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bfe885803ddfc021f4f5ad13b5cc26b5 |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-542 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01M14-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B1-20 |
filingDate | 2004-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d780bf6fac2d8d095992a1c42b38c9b |
publicationDate | 2005-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2005222799-A |
titleOfInvention | Semiconductor fine particle paste |
abstract | PROBLEM TO BE SOLVED: To provide a semiconductor fine particle paste used as a semiconductor porous layer forming material in a negative electrode of a dye-sensitized solar cell and capable of forming a porous layer by firing at a low temperature of less than 100 ° C. SOLUTION: It consists of titanium dioxide fine particles, tetraisopropoxy titanium and an organic solvent, contains tetraisopropoxy titanium in an amount of 10 to 30 parts by weight per 100 parts by weight of titanium dioxide fine particles, and has a solid content concentration of 25 to 25. A semiconductor fine particle paste characterized by being in the range of 30% by weight. [Selection figure] None. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007084671-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007242544-A |
priorityDate | 2004-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 51.