| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-106
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-111 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0382 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03C1-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate |
2005-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_88ee237348ddf794ea55454180289a13
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8ac2cf8b364240084d8f595c2b2d0fef
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa93470b731666375b28639020372b13 |
| publicationDate |
2005-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2005222059-A |
| titleOfInvention |
Negative photoresist composition |
| abstract |
PROBLEM TO BE SOLVED: To provide a negative photoresist which is not swelled and / or microbridged when an exposed photoresist is dissolved in a developing solution in order to avoid spatial resolution limitation in photolithography applications. The composition includes a radiation sensitive acid generator, an additive, and a resist polymer derived from at least a first monomer containing a hydroxy group. The first monomer can be acidic or near neutral pH. The resist polymer may further be derived from a second monomer having an aqueous base soluble site. The additive has a site represented by an N-alkoxymethyl group and may contain one or more alicyclic structures. The acid generator is adapted to generate an acid upon exposure to radiation. The resist polymer is adapted to chemically react with the additive in the presence of an acid to generate a non-crosslinkable product that is insoluble in the aqueous alkaline developer. [Selection figure] None |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7781142-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008303221-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2006035790-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8580482-B2 |
| priorityDate |
2004-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |