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publicationDate 2005-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2005197710-A
titleOfInvention Semiconductor device manufacturing method
abstract PROBLEM TO BE SOLVED: To provide a method for thermodynamically removing oxides on a copper surface by using hafnium as a barrier material after via etching in a method for manufacturing a semiconductor device. The method includes: forming a copper line embedded in at least one protective insulating layer on a substrate; and forming a via hole in the at least one protective insulating layer to form the buried line. Exposing a portion of the copper line, forming a hafnium layer in the via hole, covering the exposed portion of the buried copper line with the hafnium layer, and including the hafnium layer. Forming a conductive layer on the substrate. [Selection] Figure 2c
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