http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005109170-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e089847fde90c3197af89579db1143f1 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
| filingDate | 2003-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_350b0ebcc0031f902490c722cfe83a12 |
| publicationDate | 2005-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2005109170-A |
| titleOfInvention | Semiconductor manufacturing apparatus and semiconductor device manufacturing method |
| abstract | PROBLEM TO BE SOLVED: To prevent corrosion due to a residual etching material after etching of a metal film used in a semiconductor device. An etching means for etching a metal film formed on a wafer using a resist mask with an etching material that corrodes the metal film, an ashing means for removing the resist mask after the etching process, and a resist mask A semiconductor manufacturing apparatus 100 includes cleaning means 30 for cleaning the wafer after removal, and a corrosion prevention film forming means 40 for forming a corrosion prevention film for preventing corrosion of the metal film by the etching material after cleaning the wafer with ozone-added water. It was made to share in. The processing time of the next means is set within the processing time of the immediately preceding means. [Selection] Figure 1 |
| priorityDate | 2003-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.