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publicationDate 2005-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2005105416-A
titleOfInvention Selective isotropic etching process of titanium-based materials
abstract PROBLEM TO BE SOLVED: To provide an etching process of a titanium base layer in a semiconductor or micromachine system device. A process for etching a sacrificial layer in a mechanism, wherein the mechanism is exposed to a plasma derived from nitrogen trifluoride for etching the sacrificial layer. The process exhibits selectivity so that etching titanium nitride and titanium does not affect the adjacent silicon oxide or aluminum layer. Process applications include the formation of integrated circuit features and MENS features. [Selection] Figure 9
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