| abstract |
PROBLEM TO BE SOLVED: To solve a problem of performance improvement technology in microfabrication of a semiconductor element using actinic rays or radiation, particularly KrF excimer laser light, electron beam or EUV light, and has high sensitivity, high resolution and good The present invention provides a positive resist composition that simultaneously satisfies a desired pattern shape and good density dependence, and has a good dissolution contrast, and a pattern forming method using the same. (A) A resin containing two kinds of specific repeating units, insoluble or hardly soluble in an alkali developer, and soluble in an alkali developer by the action of an acid; (B) actinic rays Or a positive resist composition comprising a compound that generates sulfonic acid upon irradiation with radiation, and (C) a compound that generates carboxylic acid upon irradiation with actinic rays or radiation, and pattern formation using the same Method. [Selection figure] None |