| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_827d57ced6e906faab36562bfc2114a5 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B61-22 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-01 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-22 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8239
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2003-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4ccc79d3f6c6ca31da7fc476ef7661ad
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0d122ff7e45d27d2d16aeae2e0b1157c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_35c0abc30b583ddd6f552c684b220378 |
| publicationDate |
2005-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2005072491-A |
| titleOfInvention |
Dry etching method and method for manufacturing magnetic memory device |
| abstract |
PROBLEM TO BE SOLVED: To provide a process capable of satisfactorily etching particularly PtMn used for a pinned layer of MRAM. A dry etching method characterized in that a layer containing platinum and / or manganese is dry etched using pulsed plasma, and a method of manufacturing an MRAM in which this dry etching method is applied to processing of a pinned layer. This MRAM is a memory composed of a magnetic memory element composed of a tunnel magnetoresistive element in which a magnetization fixed layer with a fixed magnetization direction, a tunnel barrier layer, and a magnetic layer capable of changing the magnetization direction are stacked. Part. [Selection] Figure 4 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016512923-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011100815-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8872270-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9660181-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4653470-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102099191-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017017278-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9203013-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10644064-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006165032-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014135518-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2006100779-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9246083-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9997563-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150128663-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006278457-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012527129-A |
| priorityDate |
2003-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |