| abstract |
PROBLEM TO BE SOLVED: To remove a resist applied on a semiconductor such as Si, GaAs, GaN, InP, a metal wiring and an interlayer insulating film, a resist remaining after dry etching, or a resist residue remaining after ashing after dry etching at a low temperature A resist stripper composition that can be easily stripped in a short time and does not corrode the semiconductor and retains field effect transistor (hereinafter referred to as FET) characteristics, and a resist stripping method using the resist stripper composition and A method for manufacturing a semiconductor device is provided. A resist strip containing (A) an amine, (B) an organic solvent having a Hansen solubility parameter of 18 to 33 MPa 1/2 , (C) a saccharide, and 0 to 5 wt% (D) water. Composition, a resist stripping method for stripping a resist using the resist stripping composition, and a method for producing a semiconductor element having a resist stripping step, wherein the resist stripping composition is used in the resist stripping step. A method for manufacturing a semiconductor device, in which a resist is peeled off using a metal. [Selection figure] None |