| abstract |
A method for depositing a metal chalcogenide coating is provided. Isolation of metal chalcogenide: A precursor mainly composed of hydrazinium and a solvent having a soluble additive in the precursor are brought into contact with each other to form a complex solution thereof; Applying to the substrate to produce a solution coating on the substrate, removing the solvent from the coating to produce a composite coating on the substrate, and then annealing the composite coating, A method is provided that includes forming a metal chalcogenide film on a substrate. Also provided are methods of making metal chalcogenide precursors based on isolated hydrazinium and thin film field effect transistor devices using metal chalcogenide as the channel layer. [Selection] Figure 8 |