| abstract |
A method of manufacturing a thin film transistor array panel and a CVD apparatus capable of preventing environmental pollution and cleaning at low cost are provided. A method of manufacturing a thin film transistor array panel includes a first stage, a second stage, a third stage, a fourth stage, and a fifth stage. In the first stage, gate lines 121, 124, and 129 are formed on the insulating substrate 110. In the second stage, the gate insulating film 140, the semiconductor layer, and the resistive contact layer are formed on the gate line. In the third step, data lines 171, 173, 175 and 179 including a source electrode 173 and a drain electrode 175 are formed on the resistive contact layer. In the fourth stage, the protective film 180 is formed on the data lines. In the fifth step, the pixel electrode 190 connected to the protective film through the drain electrode 175 and the contact hole 181 is formed. In the second stage, the inside of the CVD apparatus is cleaned using fluorine gas before the gate insulating film, the semiconductor layer, and the resistive contact layer are continuously formed. [Selection] Figure 1B |