http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005049299-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-27 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2831 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2621 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-27 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 |
| filingDate | 2003-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d98295de6b47ce1f5b1605a7ecf9af06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_48b57160853cd34e822d2da78882df58 |
| publicationDate | 2005-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2005049299-A |
| titleOfInvention | Semiconductor element evaluation method |
| abstract | PROBLEM TO BE SOLVED: To provide a method for evaluating a semiconductor element including a semiconductor, an insulator and a conductor. The present invention relates to a first step of measuring a current value by applying a voltage to a conductor, and dividing the current value by an area of a region where a semiconductor and the conductor overlap to obtain a current density Jg. Using the coefficients of the second step of calculating the reciprocal of the radius r of the conductor and the equation Jg = 2A / r + B (where A and B are constants) having the current density Jg and A third step of calculating in-plane leakage current; Or, the equation Jg = A / W + B / L + C having the first and second steps, the reciprocal of the channel width W and the channel length L of the semiconductor, and the current density Jg (A, B, and C are constants) A third step of calculating a depletion layer edge leakage current, an in-plane leakage current, and a silicon edge leakage current using the coefficient of [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7944267-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7705656-B2 |
| priorityDate | 2003-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.