| abstract |
PROBLEM TO BE SOLVED: To provide a method of forming a silicon oxide film by curing a film made of spin-on glass using an oxidizing agent solution. According to a method for forming a silicon oxide film, a spin-on glass film containing polysilazane is cured using an oxidant solution and converted into a silicon oxide film by one or more heat treatments in a semiconductor device manufacturing process. The problem is solved. [Selection] Figure 1 |