| abstract |
Provided is a siloxane-based resin having excellent mechanical properties, thermal stability, resistance to cracking, and low dielectric properties, and is applied to the formation of a semiconductor interlayer insulating film to provide a low dielectric semiconductor interlayer insulating film. To do. A siloxane-based resin having a new structure is dissolved in an organic solvent, coated on a silicon substrate, and then thermally cured to manufacture a semiconductor interlayer insulating film. [Selection figure] None |