| abstract |
PROBLEM TO BE SOLVED: To disclose a chemical vapor deposition method for producing a low dielectric constant organosilicate (OSG) with improved mechanical properties by adjusting the amount of organic groups such as methyl groups in a mixture. . In one aspect of the invention, selected from the group consisting of 3-4 Si-O bonds per Si atom, Si-H, Si-Br, and Si-Cl bonds per Si atom. A first silicon-containing precursor containing 0 to 1 bonds and no Si-C bonds, and a second silicon-containing precursor containing at least one Si-C bond per Si atom. An OSG film is deposited from the containing mixture. In another embodiment of the present invention, an OSG film is deposited from a mixture containing an asymmetric silicon-containing precursor. In either aspect, the mixture can further include a pore former precursor to provide a porous OSG film. [Selection figure] None |