| abstract |
Impulsive ionization of rectilinear electrons close to the outlet openings (46, 176) of the ionization chamber (80, 175), for example, by ion implantation of a high intensity ion beam by ionizing dimer or decaborane gas or vapor. is there. Preferably, substantial ion density is created and the lateral kinetic energy of the ions is limited to 0.7 eV or less, and the width of the ionization space adjacent to the opening is less than about 3 times the width of the opening. The width is limited, the aperture is significantly longer, the magnetic field is prevented or limited, the low noise of the ion beam is maintained, and the interior of the ionization chamber is kept from forming an arc discharge. By ion beam optics, such as the batch implanter or continuous implanter of FIG. (20), ions from the ion source are transferred to the target surface and, advantageously, in some cases, the cluster ion beam. Is injected with the acceleration / deceleration beamline. Also disclosed is the configuration of an electron gun and the configuration of a ribbon-like source for the electron and ionization chambers. The formation of the drain extension features of a semiconductor device, eg, a CMOS device, and the doping of a flat panel are shown. |