http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004503082-A

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60
filingDate 2001-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2004-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2004503082-A
titleOfInvention An etchant with selectivity for doped silicon oxide on top of undoped silicon oxide and silicon nitride, methods of using the etchant, and structures formed thereby.
abstract x is an integer of 2 to 5, y is an integer of 1 to 4, and x + y is 6. The etching agent composed of C 2 H x F y selects doped silicon dioxide over undoped silicon dioxide or silicon nitride. Etching. Thus, the C 2 H x F y dry etching method using an etchant consisting of undoped silicon dioxide or silicon nitride may be used as an etch stop material. C 2 H x F y is a basic etchant, or may be used as additives other etchants and mixed etchant. Also disclosed is a semiconductor device (10) that includes a structure patterned according to the etchant of the present invention or the method of the present invention. Specifically, the present invention relates to a doped silicon oxide structure (24) having substantially vertical sidewalls (34) and an undoped silicon dioxide or silicon nitride structure exposed adjacent to the sidewalls (34). Comprising a semiconductor device (10).
priorityDate 2000-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 21.