http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004349315-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3cfa11ef6f0c5577b4612b415ff30253 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2003-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a8a72529843b91345c0b8ad5f614d88f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd73d81f4c62aaed35fc53ac7202184f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1e758fcab591b027de1f85f78b06b344 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_861263bd0af58ea85001502cdcfe1126 |
| publicationDate | 2004-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2004349315-A |
| titleOfInvention | Method for manufacturing strained SOI substrate wafer |
| abstract | Provided is a method for manufacturing a strained silicon substrate wafer having a SiC epitaxial layer that can form a high-quality strained Si layer, has fewer dislocations, and has a strain relaxed. A step of forming a porous silicon layer on a surface layer of a P + -type silicon substrate doped with high-concentration boron as a transfer-side substrate, a step of forming a SiC epitaxial layer on the surface thereof, and a step of transferring A step of forming an oxide film layer 14 on a surface layer of at least one substrate using a silicon substrate as the side substrate 15, and after the step, bonding the transfer-side substrate and the transfer-side substrate via an oxide film layer Heat treating; and separating the bonded substrate, etching the silicon substrate as the transfer-side substrate, and forming a strained silicon layer 16 on the exposed surface of the SiC epitaxial layer 13. . [Selection diagram] Fig. 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9966452-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008041830-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160035986-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3001452-A1 |
| priorityDate | 2003-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.