http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004319541-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2003-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be06ddb9c814623b4577c6dfc9c89385 |
| publicationDate | 2004-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2004319541-A |
| titleOfInvention | Contact hole etching method and etching apparatus |
| abstract | An etching stop is hardly generated even when a contact hole having a high aspect ratio is formed, and a favorable shape can be ensured. When a contact hole is etched by using a plasma of an etching gas in a silicon oxide film as an insulating film formed on a substrate, the substrate is set in a reaction vessel capable of reducing pressure. The plasma pressure of the etching gas is increased so as to approach the gas pressure in the contact hole 14 during the etching. For example, the pressure before etching is set to 1 Pa (= point a), and when the etching proceeds to a depth of 1/3 of the thickness of the silicon oxide film 12 (= point b), the set pressure is set to 1.5 Pa. When the etching proceeds to the point of 2/3 of the film thickness (point c), the set pressure is changed to 2 Pa, and the contact bottom is completely etched (point d). [Selection] Figure 2 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109817572-A |
| priorityDate | 2003-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457707758 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24261 |
Total number of triples: 14.