| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31662 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823857
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02258
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02332 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-469
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
| filingDate |
2003-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c82c3e942e8870d451f5b4112a6ac49 |
| publicationDate |
2004-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2004311739-A |
| titleOfInvention |
Semiconductor device manufacturing method and semiconductor device |
| abstract |
A method of manufacturing a semiconductor device capable of forming a thin gate insulating film corresponding to high-speed driving with good film thickness control and performing nitriding without penetrating the semiconductor substrate side, and a semiconductor device having a thin gate insulating film with good film quality. Provided is a semiconductor device in which a substrate side is hardly nitrided. A part of a first oxide film formed by thermal oxidation is removed by etching. Hot nitric acid 7 is applied to the removed portion 4 to form a second oxide film 6. These two oxide films 3 and 6 are nitrided by low-energy nitrogen plasma 8 to form a first gate insulating film 11 and a second gate insulating film 12 which are oxynitride films. [Selection diagram] Fig. 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013537716-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210053241-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10103186-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017118121-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9412773-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007273769-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013149741-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102527891-B1 |
| priorityDate |
2003-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |