http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004281771-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-268
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
filingDate 2003-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4a99297f3c6caaf6f1a817a6f8e49fa7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_23fcded19af5cf46cc27bcb1b7bbaee7
publicationDate 2004-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2004281771-A
titleOfInvention Method and apparatus for crystal growth of semiconductor thin film and method of manufacturing thin film transistor
abstract An object of the present invention is to control the position of large crystal grains obtained when crystallizing a semiconductor thin film by lateral growth. A semiconductor thin film (13) has a V-shaped point at a boundary between a melting region (24) and a non-melting region (34) of the semiconductor thin film (13). By melting the semiconductor thin film 13 so as to have the shape portion 16, the large crystal grains 19 b are laterally formed in the direction substantially parallel to the main surface of the base material toward the inside of the melting region 24 from the tip 17 of the pointed portion 16. Let it grow. [Selection diagram] FIG.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2015127036-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007208044-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9466402-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012256879-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9302348-B2
priorityDate 2003-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Predicate Subject
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Total number of triples: 22.