| abstract |
A method for repairing damage caused by plasma processing of a low-k dielectric film, maintaining the shape of a dielectric film structure, enabling a subsequent plasma processing, and selecting certain properties to be obtained. Provide a method. An active device is formed on a substrate surface, a low dielectric constant insulating layer made of a substituent-deficient silicon oxide is deposited on the active device, and the insulating layer is treated with plasma. Exposing the insulating layer to an activating substance that reacts with the substituent-deficient silicon oxide molecules changed by the treatment, and forming a metal conductor near the insulating layer after the exposing step. Production method. [Selection diagram] FIG. |