| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1089 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76882
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76856
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76876 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-04 |
| filingDate |
2003-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5bb3fe83eef9aeb97e87a8d7e3ef3c29
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d52f0b765373c2787a7d6ee5a078eed3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ecbd7fa115f0f892a4ab6782a2735208
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e2b2eb996cf4a6af128add2feac4b0c8 |
| publicationDate |
2004-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2004179605-A |
| titleOfInvention |
Aluminum metal wiring forming method |
| abstract |
A method for selectively forming an aluminum wiring in a contact hole or a groove of a semiconductor substrate is provided. An interlayer film containing nitrogen is formed on the inner surface of a contact hole or a groove and on the main surface of a semiconductor substrate (301). Plasma treatment is performed to form a protective film on the first surface portion of the interlayer film located above the main surface of the semiconductor substrate (302). Subsequently, an aluminum film is deposited by chemical vapor deposition only on the second surface portion of the interlayer film located above the inner surface of the contact hole or groove without a vacuum break in the middle (303). The plasma treatment of the first surface portion of the interlayer film suppresses chemical vapor deposition of the aluminum film 110 on the first surface portion of the interlayer film. Therefore, it is unnecessary to additionally deposit an insulating film on the metal deposition preventing film, and the process proceeds without a vacuum break during the process, so that the productivity of the aluminum wiring process can be improved. [Selection] Fig. 9 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4612533-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007146257-A |
| priorityDate |
2002-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |