http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004179501-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-322 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
filingDate | 2002-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_43affd1e45f95be9045ce11495501ab1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f62828ed1f3795a889c3d7bac89a42a9 |
publicationDate | 2004-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2004179501-A |
titleOfInvention | Semiconductor film, method of manufacturing the same, semiconductor device, method of manufacturing the same, and semiconductor manufacturing apparatus |
abstract | A high-quality crystalline semiconductor film and a method for manufacturing the same are provided. A first heat treatment is performed after a step of forming an amorphous semiconductor layer containing a rare gas element over an insulating surface, and applying a catalyst element that promotes crystallization to the amorphous semiconductor layer. Thereby, the step of crystallizing the amorphous semiconductor layer to obtain a crystalline semiconductor layer, and moving at least a part of the catalyst element remaining in the crystalline semiconductor layer, the catalyst element of the crystalline semiconductor layer Forming a low catalyst region having a lower concentration than the other regions. [Selection diagram] Fig. 1 |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021074653-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2006038351-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008263181-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7843010-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2006038351-A1 |
priorityDate | 2002-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.