http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004179501-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
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filingDate 2002-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_43affd1e45f95be9045ce11495501ab1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f62828ed1f3795a889c3d7bac89a42a9
publicationDate 2004-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2004179501-A
titleOfInvention Semiconductor film, method of manufacturing the same, semiconductor device, method of manufacturing the same, and semiconductor manufacturing apparatus
abstract A high-quality crystalline semiconductor film and a method for manufacturing the same are provided. A first heat treatment is performed after a step of forming an amorphous semiconductor layer containing a rare gas element over an insulating surface, and applying a catalyst element that promotes crystallization to the amorphous semiconductor layer. Thereby, the step of crystallizing the amorphous semiconductor layer to obtain a crystalline semiconductor layer, and moving at least a part of the catalyst element remaining in the crystalline semiconductor layer, the catalyst element of the crystalline semiconductor layer Forming a low catalyst region having a lower concentration than the other regions. [Selection diagram] Fig. 1
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