http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004172392-A

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3fb751fc1583ed35203425a4bd16589f
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
filingDate 2002-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b5a8534a94ee893b1c77777bf7902e7f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_624b2fa9533806f791d85a277fec5612
publicationDate 2004-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2004172392-A
titleOfInvention Semiconductor epitaxial wafer manufacturing apparatus, susceptor, and susceptor support apparatus
abstract An object of the present invention is to eliminate non-uniformity of dopant concentration in an epitaxial growth layer without causing a problem such as inconsistency in in-plane distribution of film thickness of the epitaxial growth layer and without forming an oxide film on a silicon wafer substrate. . A plurality of discharge holes (12, 12 ') are formed in a portion of a susceptor (10) where a silicon wafer substrate (1) is placed. Further, the discharge hole 12 is formed by inclining the susceptor 10 at a predetermined angle θ, or a radiation heat shielding plate (light shielding plate) 30 having a size corresponding to the silicon wafer substrate 1 is disposed below the susceptor 10. . [Selection diagram] FIG.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20220083083-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010135847-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111517257-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006100345-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4496052-B2
priorityDate 2002-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 28.