abstract |
A highly reliable and high-speed semiconductor device having a low dielectric constant and a method for manufacturing this semiconductor device quickly with a small number of steps are provided. In one embodiment, substantially all insulating film layers included in a semiconductor device are formed of an insulating film layer formed using a coating resin, and each of the insulating film layers formed using the coating resin is provided. Then, a first heat treatment is performed, and after the formation of the plurality of insulating film layers formed using the coating resin, the second heat treatment is collectively performed. [Selection diagram] None |