http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004146839-A

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publicationDate 2004-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2004146839-A
titleOfInvention Thin film transistor
abstract A thin film transistor having a GOLD structure is provided. A semiconductor layer having an N-type source region and a drain region on an insulating substrate, a gate insulating film on the semiconductor layer, and a gate electrode having a sidewall made of a conductive film on the gate insulating film are provided. The gate electrode is made of a material containing tungsten and molybdenum, and a region of the semiconductor layer overlapping with the sidewall via the gate insulating film has an N-type impurity concentration lower than that of the source region and the drain region. Wherein the concentration of an N-type impurity in a region of the semiconductor layer overlapping the sidewall via the gate insulating film is 1 × 10 16 to 1 × 10 17 atoms / cm 3. Thin film transistor. [Selection diagram] FIG.
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