| abstract |
Provided is a thin film forming method capable of achieving high-density plasma and forming a high-quality thin film at high speed even by using an inexpensive discharge gas such as nitrogen, and thereby providing a base material having a high-quality and dense thin film. Is provided at low cost. According to a thin film forming method using an atmospheric pressure plasma discharge treatment apparatus of the present invention, the intensity (kV / mm) of a high-frequency electric field applied from a first electrode is set to V 1 , and the intensity of a high-frequency electric field applied from a second electrode is set. Assuming that the voltage (kV / mm) is V 2 and the intensity (kV / mm) of the electric field at the start of discharge is IV, the relationship V 1 ≧ IV> V 2 or V 1 > IV ≧ V 2 is satisfied, and the second A high-frequency electric field having an output density of the high-frequency electric field applied from the electrode of 1 W / cm 2 or more is applied to form a thin film. [Selection diagram] Fig. 1 |