http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004022618-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-22 |
| filingDate | 2002-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ac842beb67f5dd164e248833721db67c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f99f2170a8cf3bd7f9051a05f3f19bb |
| publicationDate | 2004-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2004022618-A |
| titleOfInvention | Semiconductor laser device and integrated circuit thereof |
| abstract | When manufacturing a laser device by mesa processing using an etching technique, the adhesion and moisture resistance of a SiN x passivation film deteriorate due to the presence of an oxide layer formed on a semiconductor surface, and the reliability of the laser device such as wavelength shift is reduced. There was a problem that the property could not be obtained. In order to solve the above-mentioned problem, dry etching is performed using a mixed gas containing a chlorine-based gas and a nitrogen-containing gas and not containing hydrogen and oxygen as an etching gas, and the surface is directly or nitrogen-gas-plasma-etched. After the process, a nitride film passivation process is performed. [Effect] By using the above-mentioned means, the processed semiconductor surface is covered with the nitride film layer, a natural oxide film is not formed, and the adhesiveness with the nitride film is excellent. passivation film deposition of the SiN x film or the like without the intervention it is possible to. Further, since almost no oxide film is interposed, the problem of moisture resistance under high-temperature and high-humidity conditions, which has conventionally been a problem, does not pose any problem. This eliminates the need for a package sealing step, which was required for conventional devices, and at the same time reduces the cost and reliability of the laser device. [Selection diagram] Fig. 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012074409-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014075387-A |
| priorityDate | 2002-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.