| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2002-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fc179c5c2818ffe28d46b1855a1eed58 |
| publicationDate |
2003-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2003324108-A |
| titleOfInvention |
Method for manufacturing semiconductor device |
| abstract |
(57) [Problem] To provide a method of manufacturing a semiconductor device having excellent electrical characteristics by preventing a natural oxide film removed by etching from re-adhering to a sidewall or the like. SOLUTION: At least one kind of fluorine gas and argon gas selected from the group consisting of nitrogen trifluoride gas, hydrogen fluoride gas, dicarbon hexafluoride gas, carbon tetrafluoride gas and sulfur hexafluoride gas After the natural oxide film 5 existing on the surfaces of the silicon substrate 1 and the gate electrode 3 is removed by performing plasma etching using a mixed gas of the metal silicide film on the silicon substrate 1 and the gate electrode 3 I do. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180103022-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7834404-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8058166-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009021331-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102118784-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8021979-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7598171-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7851355-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2009144810-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2009144810-A1 |
| priorityDate |
2002-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |