| abstract |
PROBLEM TO BE SOLVED: To provide a method for producing a high quality SiC single crystal thin film by homoepitaxially growing a single crystal of SiC at a low growth temperature. SOLUTION: On a substrate including a single crystal silicon carbide (SiC) region, plasma enhanced chemical vapor deposition (plasma CVD) is performed. This is a method for producing a SiC single crystal thin film in which a SiC single crystal is homoepitaxially grown at 800 to 1200 ° C. In particular, use of high-density, high-energy plasma generated by plasma using a microwave, an atomic supply ratio of carbon and silicon (C / Si ratio) of 100 or more, and a supplied silicon atom concentration of 100 mol. It is preferable that the growth be performed at a ppm or less. |