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filingDate 2002-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2003-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2003257950-A
titleOfInvention Method for etching difficult-to-etch material and method and apparatus for manufacturing semiconductor using the same
abstract (57) [Problem] To improve the etching shape by preventing a deposit generated during etching of an etching material from adhering to a mask. SOLUTION: When etching the film using plasma using a film of a difficult-to-etch material formed on a substrate and a mask formed thereon, an angle of a side wall of the mask with respect to a surface of the substrate is increased. Etching is performed using a mask of less than 90 degrees, whereby the taper angle of the film after etching with respect to the surface of the substrate is equal to or larger than the taper angle of the mask.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014236096-A
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