| abstract |
[PROBLEMS] To provide a method of manufacturing an annealed wafer capable of reducing crystal defects in a wafer surface layer, uniformly forming BMD in a bulk in a wafer plane, and suppressing occurrence of slip dislocation. SOLUTION: A silicon single crystal is grown by CZ method, The silicon single crystal was processed to produce a silicon wafer, and the produced silicon wafer was placed in an atmosphere of argon gas, hydrogen gas, or a mixed gas thereof in an atmosphere of 1100 to 1100. In a method for producing an annealed wafer by performing a high-temperature heat treatment at a temperature of 1350 ° C. for 10 to 600 minutes, a silicon single crystal is grown by the Czochralski method under conditions where OSF is generated on the entire surface of the silicon wafer. A method for producing an annealed wafer, comprising: performing pre-annealing at a temperature lower than the heat treatment temperature of the high-temperature heat treatment on a silicon wafer in which OSF is generated on the entire surface manufactured by processing, and then performing the high-temperature heat treatment. |