| abstract |
An object of the present invention is to provide a positive resist composition suitable for use in an exposure light source of 160 nm or less, particularly F2 excimer laser light (157 nm), specifically 157 n. It exhibits sufficient transparency when using a light source of m, wide defocus latitude, hardly causes line edge roughness, and resist film is substantially completely dissolved when developing with a developing solution, and there is no concern about negative formation. A positive resist composition having a small line and space pattern tailing is provided. (A) A fluorine group containing a structure in which a fluorine atom is substituted on the main chain and / or side chain of a polymer skeleton, and having a group that decomposes by the action of an acid and increases solubility in an alkali developer. (B) a compound having an acid generator that generates an acid upon irradiation with actinic rays or radiation, and (B) a compound having a sulfonium salt or phenacylsulfonium salt structure that does not have an aromatic ring. A positive resist composition comprising: |