http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003229634-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 |
| filingDate | 2002-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe59ac816223ea3b0ae998d712099097 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a9a207d7d26667715502de04fccf6b75 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2bd52cdca58ac76924a9359467bb4b10 |
| publicationDate | 2003-08-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2003229634-A |
| titleOfInvention | Optical integrated device |
| abstract | (57) [Problem] To provide an optical integrated device utilizing the characteristic of a semiconductor substrate having a high-density defect region periodically. SOLUTION: This optical integrated device 40 is an optical integrated device in which a GaN-based semiconductor laser device 42 and a photodiode 44 are integrated. The GaN-based semiconductor laser device 42 On an n-type GaN substrate 12, an n-type GaN layer 14, an n-type Al GaN cladding layer 16, n-type GaN optical waveguide layer 18, active layer 20 having a multiple quantum well structure, p-type GaN optical waveguide layer 22, p-type AlGaN cladding layer 24, and p-type GaN The contact layer 26 has a laminated structure. n-type GaN The core portion 12a of the high-density defect region of the substrate 12 has a diameter of 5 A through hole 32 of 0 μm is provided. The photodiode 44 is, for example, a surface light receiving type, is provided on the GaN substrate 12 so as to cover the through hole 32, and receives light leaked from the active region through the through hole 32. The photodiode 44 receives the light leaked through the through-hole 32, measures the light output intensity, and outputs it as a control signal for the GaN-based semiconductor laser device 42. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009117522-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011014558-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007049047-A |
| priorityDate | 2002-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.