| abstract |
(57) [Abstract] (with correction) [PROBLEMS] To provide a nitride-based semiconductor laser device which is easy in process, excellent in reproducibility, excellent in beam characteristics, and capable of high-output low-current operation. A plurality of nitride-based semiconductor layers (Ga x In y Al z) grown laterally from openings formed on a substrate are provided. B 1 -xyz N: 0 ≦ x, y, z, x + y + z ≦ 1), and the contact layer 18 made of the nitride-based semiconductor layer An active layer 14 made of the nitride-based semiconductor layer formed on the contact layer 18, a clad layer 13 made of the nitride-based semiconductor layer of a different conductivity type formed so as to sandwich the active layer 14, Wherein the active layer 14 and the cladding layers 13 and 15 are formed in the plurality of nitride-based semiconductor layers so as to be separated from each other in the lateral direction by more than the thickness of the contact layer. Semiconductor laser device. |