http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003158113-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323 |
filingDate | 2001-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_81f46891bc33986260f422298a178d30 |
publicationDate | 2003-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2003158113-A |
titleOfInvention | Semiconductor device manufacturing method and etching apparatus |
abstract | (57) Abstract: In manufacturing a semiconductor device including a step of etching a semiconductor layer of a substrate having a semiconductor layer formed on a surface, the semiconductor layer is etched with excellent processing accuracy. A substrate having a semiconductor layer formed on its surface is immersed in an etching solution, and a desired portion of the semiconductor layer is irradiated with light having energy equal to or greater than the band gap of the semiconductor layer emitted from the etching solution. Then, the portion of the semiconductor layer irradiated with the light is dissolved in the etching solution 15 and etched. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11791151-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7295836-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7442644-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7148149-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010225605-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008517453-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009188240-A |
priorityDate | 2001-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.