Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
filingDate |
2001-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7eb62298f4e22ac4b0d13511346ca7fe http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b8905ac50654fc7334a7463e844ca65d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8e334bf43c5c74612c3ab052ef9bf61d |
publicationDate |
2003-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2003151904-A |
titleOfInvention |
Semiconductor thin film crystallization method, semiconductor thin film, and thin film semiconductor device |
abstract |
(57) Abstract: A semiconductor thin film crystallization method, a semiconductor thin film, and a thin film semiconductor device are formed. It is an object to provide a semiconductor device having uniform characteristics. A non-single-crystal semiconductor thin film (3) containing at least Si as a main component and formed on an insulating substrate (1) is irradiated with an energy beam (4) so that the crystal orientation with respect to the surface is substantially <10. After the polycrystalline semiconductor thin film 5 having the <0> orientation is formed, the polycrystalline semiconductor thin film 5 is irradiated with a continuous wave laser beam 6 so that the crystal orientation is substantially <100> and the crystallized semiconductor thin film having a larger grain size. Get 7. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2006038351-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2006038351-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007053364-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7985665-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006203047-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020184153-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7364992-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012119669-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4674092-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7843010-B2 |
priorityDate |
2001-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |