http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003151904-A

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Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
filingDate 2001-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7eb62298f4e22ac4b0d13511346ca7fe
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b8905ac50654fc7334a7463e844ca65d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8e334bf43c5c74612c3ab052ef9bf61d
publicationDate 2003-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2003151904-A
titleOfInvention Semiconductor thin film crystallization method, semiconductor thin film, and thin film semiconductor device
abstract (57) Abstract: A semiconductor thin film crystallization method, a semiconductor thin film, and a thin film semiconductor device are formed. It is an object to provide a semiconductor device having uniform characteristics. A non-single-crystal semiconductor thin film (3) containing at least Si as a main component and formed on an insulating substrate (1) is irradiated with an energy beam (4) so that the crystal orientation with respect to the surface is substantially <10. After the polycrystalline semiconductor thin film 5 having the <0> orientation is formed, the polycrystalline semiconductor thin film 5 is irradiated with a continuous wave laser beam 6 so that the crystal orientation is substantially <100> and the crystallized semiconductor thin film having a larger grain size. Get 7.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2006038351-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2006038351-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007053364-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7985665-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006203047-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020184153-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7364992-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012119669-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4674092-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7843010-B2
priorityDate 2001-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 25.