| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B57-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2002-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a44f8a4fada105a7dfab4a9372f60dca
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f08deb76768beef3b5ef0230b83d069b |
| publicationDate |
2003-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2003133268-A |
| titleOfInvention |
Polishing material, slurry composition for CMP, method for forming RTN pattern, method for manufacturing semiconductor device, and semiconductor device |
| abstract |
(57) [Problem] To improve the polishing rate of RTN even under a low polishing pressure. A slurry composition for CMP for polishing a ruthenium titanium nitride thin film, comprising a polishing material, comprising cerium (IV) diammonium nitrate And a strong acid solution. Cerium (IV) diammonium nitrate Is 1 to 10% by weight based on the total weight of the slurry. By performing the chemical mechanical polishing step using the slurry according to the present invention, the polishing rate of the ruthenium titanium nitride thin film can be improved even under a low polishing pressure, and furthermore, one kind of slurry is used. As a result, the chemical mechanical polishing process can be performed with only one step, and the defects on the insulating film can be reduced and the polishing characteristics can be improved. Therefore, the chemical mechanical polishing process can be simplified. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013069714-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013102051-A |
| priorityDate |
2001-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |