| abstract |
(57) [Summary] [Problem] To be superior in corrosion resistance to halogen-based corrosive gas, generate less heat due to absorption of high frequency and microwave, and have higher bending strength and hardness than conventional alumina sintered bodies. Provided is a member for a semiconductor manufacturing apparatus comprising an alumina sintered body. The content of yttrium, aluminum, and garnet is 3 to 50% by weight, and the content of silicon oxide is 0.2. % By weight or less, and the balance substantially consists of alumina, A member for a semiconductor manufacturing apparatus is manufactured from an alumina sintered body having a dielectric loss (tan δ) of 10 × 5 −4 GHz or less of 4 × 10 −4 or less. |