http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003110027-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 |
| filingDate | 2001-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c14305bf8a7f53ccfeaf5a20d3a7ebc7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4976c38dcff27705a325b863dba59445 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a3f407f2a2e587157a95e2b6e96ab2b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d1df4c013f6a50d6d7a42d006040f89 |
| publicationDate | 2003-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2003110027-A |
| titleOfInvention | Semiconductor device and method of manufacturing semiconductor device |
| abstract | (57) [Summary] A high-quality semiconductor device that suppresses warpage of a semiconductor substrate and improves fillability of a groove formed in the semiconductor substrate, and a high-quality semiconductor device efficiently and Provided is a method of manufacturing a semiconductor device which can be easily manufactured. A surface 1a of a silicon substrate 1 is etched to form a shallow entrance 3 having an opening 2 on the surface 1a. A trench body 4 having a width smaller than the opening 2 of the entrance 3 and a depth greater than the width is formed along the thickness direction of the silicon substrate 1 so as to communicate with the bottom of the entrance 3. A trench 5 composed of the portion 3 and the trench body 4 is formed. Inside of trench 5 and silicon substrate 1 Is oxidized on the surface 1a to provide a thin-film-shaped SiO 2 film 8. The inside of the trench 5 provided with the SiO 2 film 8 is formed by CVD. The polysilicon 6 is buried by the method. An unnecessary layer of polysilicon 6 deposited on the SiO 2 film 8 is removed by the CMP method. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020004936-A |
| priorityDate | 2001-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.