| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_86ff778280a8f314c5732fead5868411 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
2001-07-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0ce12f6db376cf4f9388a1d7f0ad345a |
| publicationDate |
2003-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2003017420-A |
| titleOfInvention |
Gallium nitride based compound semiconductor substrate and method of manufacturing the same |
| abstract |
(57) Abstract: Provided is a gallium nitride-based compound semiconductor substrate that eliminates device steps such as lateral growth in growing a gallium nitride-based compound semiconductor layer on a substrate and further has a low-defect region uniformly. A method for growing a gallium nitride-based compound semiconductor substrate, wherein a Si doping concentration is 1 × 10 19 / cm. A first gallium nitride-based compound semiconductor layer that is 3 or more; The non-doped or Si doping concentration laminated on the first gallium nitride-based compound semiconductor layer is 1 × 10 19 / and a second gallium nitride-based compound semiconductor layer having a size of not more than cm 3 . |
| isCitedBy |
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| priorityDate |
2001-07-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |