| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02576
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02389
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0237
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02433
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
2008-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_584e28b75313e8a52525bfaadac2fe23
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_504596c202e5db34ea06a3f02f20abfa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_83ab69f5d6f46885c7e7886a47bc57d3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_35c6e66d6ee9d7b287e474de79ad320e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed7325bc83b3fb1866a2455cc6538539 |
| publicationDate |
2009-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-2063458-A2 |
| titleOfInvention |
Group III nitride semiconductor crystal growing method, group III nitride semiconductor crystal substrate fabrication method, and group III nitride semiconductor crystal substrate |
| abstract |
A growing method of a group III nitride semiconductor crystal includes the steps of preparing an underlying substrate (step S1), and growing a first group III nitride semiconductor crystal doped with silicon by using silicon tetrachloride (SiCl 4 ) gas as doping gas, on the underlying substrate by vapor phase growth (step S2). The growth rate of the first group III nitride semiconductor crystal is at least 200 µm/h and not more than 2000 µm/h. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10538862-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3272915-A4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11047067-B2 |
| priorityDate |
2007-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |