http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003007683-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
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filingDate 2001-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4660a8f141b1ccbd295e02a948da37d8
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publicationDate 2003-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2003007683-A
titleOfInvention Plasma processing equipment
abstract (57) [PROBLEMS] To provide a plasma processing apparatus capable of preventing abnormal discharge and performing uniform etching in plasma processing of a silicon-based substrate. SOLUTION: In a plasma processing apparatus, as a material of an electrode member 17 for a plasma processing apparatus which is mounted on a front surface of a gas supply port of a plasma generating electrode, a ceramic skeleton portion 18a containing alumina is continuously formed in a three-dimensional network. A gas for plasma generation is made to pass through the pores 18b formed irregularly in the three-dimensional network structure using the ceramic porous body having the three-dimensional network structure. Thereby, the distribution of the supplied gas is made uniform, abnormal discharge is prevented, and uniform etching without variation can be performed.
priorityDate 2001-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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