Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_696ca0ae93d5cf5a686273601361781f |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
filingDate |
2001-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b987a658a4ff54cfd12727c62f545117 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a9581686b6f8593f07d39816ba26c9ea http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aac1e23a8265891caa53982fec52bc34 |
publicationDate |
2003-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2003005388-A |
titleOfInvention |
A method for manufacturing a semiconductor element. |
abstract |
(57) [Problem] To remove a resist residue generated after dry etching, and to further prevent corrosion of a metal conductive film such as aluminum or an aluminum alloy, and to remove resist from a semiconductor substrate. Provide a rinsing method. After a resist residue is stripped with a stripping solution containing a fluorine-based compound, the resist residue is rinsed with an aqueous solution containing a quaternary ammonium compound and having a pH of 10 or less. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005070118-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007123787-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8772214-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7884027-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4734090-B2 |
priorityDate |
2001-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |