| abstract |
(57) Abstract: A method for etching a platinum electrode layer disposed on a substrate for manufacturing a semiconductor device including a plurality of platinum electrodes. This method involves heating the substrate to a temperature greater than about 150 ° C. and heating the platinum electrode layer to nitrogen and halogen (e.g., chlorine) and noble gases (e.g., argon), BCl 3 , HBr, SiCl 4 and Etching using a plasma of an etching gas containing a gas selected from the group consisting of these mixtures. The substrate may be heated in a reactor chamber having a dielectric window that includes a deposit receiving surface having a surface finish that includes a peak to valley roughness height having an average height of greater than about 1000 °. |