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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
filingDate 1999-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2002-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2002507059-A
titleOfInvention Copper etchback process
abstract (57) [Summary]nThe present invention provides a method of etching a layer of copper to remove portions of the film that are not the desired conductive interconnect structure while avoiding the formation of corrosive surface contamination on the overetched and etched copper surface. The deposited copper layer is etched back to the top or field surface of the substrate including the trenches and vias filled with copper. Etchback of the copper layer is performed on the substrate surface using a low temperature mode and physical impact of the copper surface. Alternatively, the etchback is performed at an elevated temperature of about 150 degrees or higher or using three different etching operations. The etching plasma is formed from a non-reactive gas, a gas that produces a reactive species of chlorine or fluorine, or a combination of non-reactive gases adjusted to adjust selectivity and etch rate.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007520080-A
priorityDate 1998-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 29.