| abstract |
(57) Abstract: A semiconductor device having a through hole penetrating an electrode pad and a semiconductor substrate, the semiconductor device being capable of sufficiently securing insulation between the electrode pad and the semiconductor substrate on a side wall of the through hole. To provide. SOLUTION: A silicon substrate 201 (semiconductor substrate), An element formation layer 202 (element) formed on one surface 201a of the silicon substrate 201, an electrode pad 211 electrically connected to the element formation layer 202, and penetrates the electrode pad 221 and the silicon substrate 201. Through hole 2 12 (through hole) and SiO 2 film 2 on electrode pad 211 09 (insulating film) and a wiring pattern 214, and the diameter R1 of the through hole 212 penetrating the electrode pad 211 is larger than the diameter R2 of the part penetrating the silicon substrate 201. According to the semiconductor device 215 which is large. |