http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002343770-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3266 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2001-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b692c4492c8d98a3ec76c846c822e89f |
| publicationDate | 2002-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2002343770-A |
| titleOfInvention | Etching method, etching apparatus and method for manufacturing semiconductor device |
| abstract | [PROBLEMS] To provide a method of manufacturing a semiconductor device in which an etching selectivity of a film to be etched to metal silicide, Si, and photoresist is improved. A method for manufacturing a semiconductor device according to the present invention includes: Diffusion layers 6 on the gate electrode 3 and in the source / drain regions A step of forming Ti silicide films 9a to 9c on The step of forming an interlayer insulating film 10 on the Ti silicide film and the dry etching of the interlayer insulating film allow the interlayer insulating film 10 to diffuse into contact holes 10a and source / drain regions located above gate electrodes. Forming contact holes 10b and 10c located above the layer, wherein the etching gas used in the dry etching includes at least one of an O 2 gas or an O 3 gas and a fluorocarbon-based gas. A gas, and the temperature of the semiconductor substrate during the dry etching is 30 ° C. or less. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2015011829-A1 |
| priorityDate | 2001-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.