| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-485 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2001-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ecacd43edc68c2d1d02ac87d60ee6d7b |
| publicationDate |
2002-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2002343743-A |
| titleOfInvention |
Method for forming contact plug of semiconductor device |
| abstract |
(57) Abstract: Provided is a contact plug forming method using silicon epitaxial growth that can reduce a process temperature to a temperature of 700 ° C. or less which does not adversely affect device characteristics. SOLUTION: A silicon epitaxial layer 4 is grown as a contact plug material on a region of a silicon substrate 1 exposed by a contact hole 3 formed in an insulating film 2 by a low pressure chemical vapor deposition (LPCVD) method. Is grown at a temperature of 600 to 700 [deg.] C., grown in single-crystal silicon 4a in a contact region with the silicon substrate, and grown in polysilicon 4b in a sidewall region of the contact hole. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008166695-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006303402-A |
| priorityDate |
2001-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |